Journals

Journals Before 1999 5
2023-09-12
์กฐํšŒ 18

Sung-Woong Chung, Joo-Han Shin, Nae-Hak Park and Jin Won Park, โ€œDielectric Properties of Hydrogen Silsesquioxane Films Degraded by Heat and Plasma Treatment.โ€, Jpn. J. Appl.Phys., Vol.38 (1999) pp.5214-5219.

2023-09-12
์กฐํšŒ 13

Sung-Woong Chung, Y. I. Kim, H. L. Park, W. J. Lee, โ€œElectrical properties of the perovskite (Pb, La)TiO3 films deposited by electron cyclotron resonance plasma enhanced chemical vapor depositionโ€, Journal of Materials Science: Materials in Electronicsโ€ฏ9(5):383-390, 1998

2023-09-12
์กฐํšŒ 15

Sung-Woong Chung, Su-Ock Chung, KS No, Won-Jong Lee, โ€œCrystalline structures of the PbTiO 3 films prepared using the ECR PECVD methodโ€, Thin Solid Filmsโ€ฏ295(1):299-304, 1997

2023-09-12
์กฐํšŒ 11

Chang Seung Lee, Sung-Woong Chung, Yong-Chun Kim, In-Seop Chung, Dang-Moon Wee, Won-Jong Lee, โ€œGrowth of highly oriented Pt(100) thin films on a MgO(100) seed layer deposited on Si(100) substrates by rf magnetron sputteringโ€, Surface and Coatings Technologyโ€ฏ90(3):229-233, 1997

2023-09-12
์กฐํšŒ 20

Sung-Woong Chung, Jung-Shik Shin, Jae-Whan Kim, KS No, Sung-Soon Chun, Won-Jong Lee,โ€Characterization of PbTiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by ECR PECVDโ€, Journal of Materials Researchโ€ฏ10(2):447-452, 1995

419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si,

Gyeongsangbuk-do, Republic of Korea [37666]


swchung@postech.ac.kr

©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.

 419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea [37666]

  swchung@postech.ac.kr

  ©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.

  ๊ฐœ์ธ์ •๋ณด์ทจ๊ธ‰์ฒ˜๋ฆฌ๋ฐฉ์นจ