IMPD

2026 Journals 2

2

"Barrier-Engineered Drain-Adaptive Thyristor 1T-DRAM for Disturb Suppression"

2026-05-09

Hyeon-Seo Do, Chae-Ryang Heo, Sung-Woong Chung*, "Barrier-Engineered Drain-Adaptive Thyristor 1T-DRAM for Disturb Suppression", IEEE Electron Device Letters, Journal Pre-proof, 2026

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1

"Self–Activating atomic layer deposition: A kinetic strategy for growth of metastable, high work function MoO2 thin films"

2026-05-03

Hyun-June Park, Kyu-Hwan Seok, Muheon Kim, Subin Lee, Min-Su Cho, Seungmin Jo, Woongkyu Lee, Yong Joo Park, Dong Hun Shin, Sung-Woong Chung*, "Self–Activating atomic layer deposition: A kinetic strategy for growth of metastable, high work function MoO2 thin films", Applied Surface Science 741:167082, 2026

Link

2 "Barrier-Engineered Drain-Adaptive Thyristor 1T-DRAM for Disturb Suppression"

1 "Self–Activating atomic layer deposition: A kinetic strategy for growth of metastable, high work function MoO2 thin films"

2

"Barrier-Engineered Drain-Adaptive Thyristor 1T-DRAM for Disturb Suppression"

1

"Self–Activating atomic layer deposition: A kinetic strategy for growth of metastable, high work function MoO2 thin films"