Patent
US
US
50 | Method for fabricating isolation layer in semiconductor device | |
U.S. Patent No. 06949447 |
49 | Transistor for semiconductor device and method of forming the same | |
U.S. Patent No. 07691699 |
48 | Semiconductor device having a recess channel transistor | |
U.S. Patent No. 07615449 |
47 | Transistor for semiconductor device and method of forming the same | |
U.S. Patent No. 07692251 |
46 | Semiconductor device with substantial driving current and decreased junction leakage current | |
U.S. Patent No. 07432162 |
45 | Semiconductor device with increased channel area and decreased leakage current | |
U.S. Patent No. 07592210 |
44 | Method for fabricating a semiconductor device | |
U.S. Patent No. 07459358 |
43 | Vertical floating body cell of a semiconductor device and method for fabricating the same | |
U.S. Patent No. 07663188 |
42 | Semiconductor device with substantial driving current and decreased junction leakage current | |
U.S. Patent No. 07638838 |
41 | Semiconductor device having a recess channel transistor | |
U.S. Patent No. 07960761 |
40 | Method for manufacturing semiconductor device | |
U.S. Patent No. 08115255 |
39 | Semiconductor device with recess and fin structure | |
U.S. Patent No. 08110871 |
38 | Method for manufacturing a semiconductor device | |
U.S. Patent No. 07727826 |
36 | Vertical floating body cell of a semiconductor device and method for fabricating the same | |
U.S. Patent No. 07943444 |
35 | Semiconductor device with increased channel area and decreased leakage current | |
U.S. Patent No. 07910989 |
34 | Non-volatile semiconductor memory apparatus | |
U.S. Patent No. 08325541 |
33 | Method of manufacturing semiconductor device with recess and Fin structure | |
U.S. Patent No. 08357572 |
32 | Method for manufacturing semiconductor device | |
U.S. Patent No. 08476707 |
31 | Semiconductor memory device | |
U.S. Patent No. 08502186 |
30 | Electronic device | |
U.S. Patent No. 10580969 |
29 | Electronic device | |
U.S. Patent No. 10403345 |
28 | Electronic device having buried gate and method for fabricating the same | |
U.S. Patent No. 09331267 |
27 | Electronic device | |
U.S. Patent No. 09147442 |
26 | Electronic device | |
U.S. Patent No. 09412444 |
25 | Electronic device | |
U.S. Patent No. 09406380 |
24 | Electronic device including a semiconductor memory having a barrier layer | |
U.S. Patent No. 09923026 |
23 | Electric device having wire contacts coupled to stack structures with variable resistance elements | |
U.S. Patent No. 09520187 |
22 | Electronic device having buried gate and method for fabricating the same | |
U.S. Patent No. 09570511 |
21 | Electronic device | |
U.S. Patent No. 09892774 |
Method for fabricating isolation layer in semiconductor device | |
U.S. Patent No. 06949447 | |
50 |
Transistor for semiconductor device and method of forming the same | |
U.S. Patent No. 07691699 | |
49 |
Semiconductor device having a recess channel transistor | |
U.S. Patent No. 07615449 | |
48 |
Transistor for semiconductor device and method of forming the same | |
U.S. Patent No. 07692251 | |
47 |
Semiconductor device with substantial driving current and decreased junction leakage current | |
U.S. Patent No. 07432162 | |
46 |
Semiconductor device with increased channel area and decreased leakage current | |
U.S. Patent No. 07592210 | |
45 |
Method for fabricating a semiconductor device | |
U.S. Patent No. 07459358 | |
44 |
Vertical floating body cell of a semiconductor device and method for fabricating the same | |
U.S. Patent No. 07663188 | |
43 |
Semiconductor device with substantial driving current and decreased junction leakage current | |
U.S. Patent No. 07638838 | |
42 |
Semiconductor device having a recess channel transistor | |
U.S. Patent No. 07960761 | |
41 |
Method for manufacturing semiconductor device | |
U.S. Patent No. 08115255 | |
40 |
Semiconductor device with recess and fin structure | |
U.S. Patent No. 08110871 | |
39 |
Method for manufacturing a semiconductor device | |
U.S. Patent No. 07727826 | |
38 |
Vertical floating body cell of a semiconductor device and method for fabricating the same | |
U.S. Patent No. 07943444 | |
36 |
Semiconductor device with increased channel area and decreased leakage current | |
U.S. Patent No. 07910989 | |
35 |
Non-volatile semiconductor memory apparatus | |
U.S. Patent No. 08325541 | |
34 |
Method of manufacturing semiconductor device with recess and Fin structure | |
U.S. Patent No. 08357572 | |
33 |
Method for manufacturing semiconductor device | |
U.S. Patent No. 08476707 | |
32 |
Semiconductor memory device | |
U.S. Patent No. 08502186 | |
31 |
Electronic device | |
U.S. Patent No. 10580969 | |
30 |
Electronic device | |
U.S. Patent No. 10403345. | |
29 |
Electronic device having buried gate and method for fabricating the same | |
U.S. Patent No. 09331267 | |
28 |
Electronic device | |
U.S. Patent No. 09147442 | |
27 |
Electronic device | |
U.S. Patent No. 09412444 | |
26 |
Electronic device | |
U.S. Patent No. 09406380 | |
25 |
Electronic device including a semiconductor memory having a barrier layer | |
U.S. Patent No. 09923026 | |
24 |
Electric device having wire contacts coupled to stack structures with variable resistance elements | |
U.S. Patent No. 09520187 | |
23 |
Electronic device having buried gate and method for fabricating the same | |
U.S. Patent No. 09570511 | |
22 |
Electronic device | |
U.S. Patent No. 09892774 | |
21 |
Others
20 | Vertical floating body cell of a semiconductor device and method for fabricating the same | |
China Patent No. 101355085 |
19 | Semiconductor device having a fin channel transistor and preparation method thereof | |
China Patent No. 100536141 |
18 | Semiconductor device having depressed channel transistor | |
China Patent No. 100593860 |
17 | Semiconductor device with substantial driving current and decreased junction leakage current | |
China Patent No. 100505258 |
13 | Semiconductor device having a fin channel transistor | |
TW95142213A |
12 | Vertical floating body cell of a semiconductor dev | |
TW96137957A |
11 | SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD | |
JP2006153562A |
10 | Magnetic memory device | |
TW106131007A |
6 | VMagnetic memory device | |
TW106131007A |
5 | SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD | |
JP2006194054A |
2 | Magnetic memory device | |
TW106131007A |
Vertical floating body cell of a semiconductor device and method for fabricating the same | |
China Patent No. 101355085 | |
20 |
Semiconductor device having a fin channel transistor and preparation method thereof | |
China Patent No. 100536141 | |
19 |
Semiconductor device having depressed channel transistor | |
China Patent No. 100593860 | |
18 |
Semiconductor device with substantial driving current and decreased junction leakage current | |
China Patent No. 100505258 | |
17 |
Semiconductor device having a fin channel transistor | |
TW95142213A | |
13 |
Vertical floating body cell of a semiconductor dev | |
TW96137957A | |
12 |
SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD | |
JP2006153562A | |
11 |
Magnetic memory device | |
TW106131007A | |
10 |
VMagnetic memory device | |
TW106131007A | |
6 |
SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD | |
JP2006194054A | |
5 |
Magnetic memory device | |
TW106131007A | |
2 |
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si,
Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.