Patent
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Transistor for semiconductor device and method of forming the same
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Semiconductor device having a recess channel transistor
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Transistor for semiconductor device and method of forming the same
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Semiconductor device with substantial driving current and decreased junction leakage current
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Semiconductor device with increased channel area and decreased leakage current
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Method for fabricating a semiconductor device
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Vertical floating body cell of a semiconductor device and method for fabricating the same
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Semiconductor device with substantial driving current and decreased junction leakage current
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Semiconductor device having a recess channel transistor
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419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si,
Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.