Research
I Advanced Memory Technology
I Advanced Memory Technology
We have an interest in the scale-down technology of memory devices. For example, DRAM has difficulties in the capacitor process. To solve this issue, we researched high-k dielectrics and high-work-function electrodes for DRAM capacitors. Also, we focus on the 3D integration of NAND and DRAM. We learned about alternative channel materials for NAND and the 3D architecture of DRAM.
Also, we focus on the 3D integration of NAND and DRAM. We learned about alternative channel materials for NAND and the 3D architecture of DRAM.
The IMPD lab also focuses on next-generation memory, especially STT-MRAM. We try to study the ferromagnetic properties of CoFeB. For the tunneling barrier of MTJ, we have to investigate the thickness measurement method of ultra-thin film.
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si,
Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.
