Conference

2016 Conference 1
2023-09-12
조회 4

“4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure”

Sung-Woong Chung, SK Hynix, T. Kishi, J. W. Park, M. Yoshikawa, K. S. Park, T. Nagase, K. Sunouchi, H. Kanaya, G. C. Kim, K. Noma, M. S. Lee, A. Yamamoto, K. M. Rho, K. Tsuchida, S. J. Chung, J. Y. Yi, H. S. Kim, Y.S. Chun, H. Oyamatsu, S. J. Hong

Proc. International Electron Devices Meeting (IEDM), 2016

419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si,

Gyeongsangbuk-do, Republic of Korea [37666]


swchung@postech.ac.kr

©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.


419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea [37666]

swchung@postech.ac.kr

©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.