Conference
“4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure”
Sung-Woong Chung, SK Hynix, T. Kishi, J. W. Park, M. Yoshikawa, K. S. Park, T. Nagase, K. Sunouchi, H. Kanaya, G. C. Kim, K. Noma, M. S. Lee, A. Yamamoto, K. M. Rho, K. Tsuchida, S. J. Chung, J. Y. Yi, H. S. Kim, Y.S. Chun, H. Oyamatsu, S. J. Hong
Proc. International Electron Devices Meeting (IEDM), 2016
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si,
Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.