IMPD

2009 Conference 2

2

“Highly scalable Z-RAM with remarkably long data retention for DRAM application”

2023-09-12

“Highly scalable Z-RAM with remarkably long data retention for DRAM application”

Tae-Su Jang, Joong-Sik Kim, Sang-Min Hwang, Young-Hoon Oh, Kwang-Myung Rho, Seoung-Ju Chung, Su-Ock Chung, Jae-Geun Oh, S. Bhardwaj, Jungtae Kwon, D. Kim, M. Nagoga, Yong-Taik Kim, Seon-Yong Cha, Seung-Chan Moon, Sung-Woong Chung, Sung-Joo Hong, Sung-Wook Park

Digest of Technical Papers - Symposium on VLSI Technology, 2009

1

“Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications”

2023-09-12

“Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications”

Dong-jun Seong, Jubong Park, Nodo Lee, Musarrat Hasan, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Minseok Jo, Wootae Lee, Sangsu Park, Seonghyun Kim, Yun Hee Jang, Y. Lee, M. Sung, D. Kil, Y. Hwang, S. Chung, S. Hong, J. Roh, Hyunsang Hwang

Proc. International Electron Devices Meeting (IEDM), 2009

2 “Highly scalable Z-RAM with remarkably long data retention for DRAM application”

1 “Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications”

2

“Highly scalable Z-RAM with remarkably long data retention for DRAM application”

1

“Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications”