Conference
“Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM”
Sung-Woong Chung, Sang-Tae Ahn, Hyunchul Sohn, Jachun Ku, Sungki Park, Yong-Wook Song, Hyo-Sik Park, Sang-Don Lee
Proc. International Electron Devices Meeting (IEDM), 8-11, pp.233-236, 2002
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si,
Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.
419-1 C5, 80, Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea [37666]
swchung@postech.ac.kr
©2023 INNOVATIVE MEMORY PROCESS AND DEVICE. ALL RIGHTS RESERVED.
